Supporting a wide range of products from mobile devices to servers, 14 nm transistors improve performance and reduce leakage power. Intel® 14 nm technology will be used to manufacture a wide range of high-performance to low-power products including servers, personal computing devices, and products for the Internet of Things. The first systems based on the Intel® Core™ M processor were made available on shelves for the holiday selling season followed by broader OEM availability in the first half of 2015. Additional products based on 14 nm process technology will be introduced in the coming months.
Using 2nd generation 3D tri-gate transistors, the 14 nm technology delivers industry-leading performance, power, density, and cost per transistor, and will be used to manufacture a wide range of products, from high performance to low power.
Intel 14 nm technology provides good dimensional scaling from 22 nm. The transistor fins are taller, thinner, and more closely spaced for improved density and lower capacitance. Improved transistors require fewer fins, further improving density, and the SRAM cell size is almost half the area of that in 22 nm.
Intel’s 14 nm process and lead system-on-a-chip (SoC) product are now qualified and in volume production, with fabs in Oregon (2014), Arizona (2014), and Ireland (2015).
Intel Fellow Mark Bohr discusses the new 14 nm transistor process and how the tri-gate fins are now taller, thinner, and closer together, enabling more performance, less active power, and longer battery life for greater computing experiences.
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